Atomic layer etching: An industry perspective
CT Carver, JJ Plombon, PE Romero… - ECS Journal of Solid …, 2015 - iopscience.iop.org
This paper provides an industry perspective on atomic layer etching (ALEt) process. Two
process sequences representing two different methods of ALEt are described, followed by …
process sequences representing two different methods of ALEt are described, followed by …
Plasma processing of low-k dielectrics
This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …
the field of plasma processing of low dielectric constant (low-k) materials developed for …
Toward successful integration of porous low-k materials: Strategies addressing plasma damage
The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
Influence of the content of polymethyl methacrylate on the properties of porous Si3N4 ceramics fabricated by digital light processing
YR Wu, C Tian, JM Wu, HL Huang, CL Liu, X Lin… - Ceramics …, 2023 - Elsevier
Porous Si 3 N 4 ceramics are highly regarded as ideal materials for radomes due to their
unique characteristics. However, the slurry used for the preparation of porous Si 3 N 4 …
unique characteristics. However, the slurry used for the preparation of porous Si 3 N 4 …
Inherent selective pulsed chemical vapor deposition of aluminum oxide in nm scale
Inherent selective pulsed chemical vapor deposition (CVD) of aluminum oxide on Si and SiO
2 in preference to SiCOH has been studied. SiCOH is alkyl (-C x H y) terminated SiO 2 …
2 in preference to SiCOH has been studied. SiCOH is alkyl (-C x H y) terminated SiO 2 …
Inherently selective water-free deposition of titanium dioxide on the nanoscale: implications for nanoscale patterning
Y Cho, CF Ahles, JY Choi, J Huang, A Jan… - ACS Applied Nano …, 2022 - ACS Publications
Water-free inherent selective deposition of TiO2 on Si and SiO2 in preference to SiCOH has
been studied via atomic layer deposition (ALD) and pulsed chemical vapor deposition …
been studied via atomic layer deposition (ALD) and pulsed chemical vapor deposition …
Inherent selective pulsed chemical vapor deposition of amorphous hafnium oxide/titanium oxide nanolaminates
Water-free Inherent selective pulsed chemical vapor deposition (CVD) of HfO 2/TiO 2
nanolaminates on Si and SiO 2 in preference to SiCOH has been studied. SiCOH is highly …
nanolaminates on Si and SiO 2 in preference to SiCOH has been studied. SiCOH is highly …
Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer
We report the feasibility of ultralow-amorphous boron nitride (-BN) film as a new capping
layer for copper (Cu) interconnects.-BN thin films were successfully deposited using a …
layer for copper (Cu) interconnects.-BN thin films were successfully deposited using a …
Hybrid low dielectric constant thin films for microelectronics
The fabrication of future interconnects in integrated circuits requires insulators with
decreasing dielectric constants in order to maintain or improve the electrical performance of …
decreasing dielectric constants in order to maintain or improve the electrical performance of …
Ultralow dielectric constant SiCOH films by plasma enhanced chemical vapor deposition of decamethylcyclopentasiloxane and tetrakis (trimethylsilyloxy) silane …
Y Park, H Lim, S Kwon, W Ban, S Jang, D Jung - Thin Solid Films, 2021 - Elsevier
In semiconductor industry, SiCOH films with low dielectric constant (relative dielectric
constant k≤ 4.0) have been widely used as inter-metal dielectric (IMD) materials in the …
constant k≤ 4.0) have been widely used as inter-metal dielectric (IMD) materials in the …