The use of small-angle x-ray scattering to examine nanostructural features of a-Si: H and the
related alloys a-SiGe: H and a-SiC: H will be reviewed. A wide range of H, Ge, and C …

It is universally found that the photoelectronic properties of a-Ge: H and a-Si 1− x Ge x: H
alloys are much poorer than those of a-Si: H. For example, the efficiency mobility-lifetime …

Radio frequency glow discharge chemical vapor deposition has been used to deposit thin
films of a-Si 1− x Ge x: H which possess optoelectronic properties that are greatly improved …

Intrinsic amorphous silicon germanium (ia-SiGe: H) films with V, U and VU shape band gap
profiles for amorphous silicon germanium (a-SiGe: H) heterojunction solar cells were …

The microstructures of two sets of hydrogenated amorphous silicon-germanium (a-Sit-, Ge,:
H) alloys prepared by the plasma-enhanced, chemical-vapor-deposition technique with and …

The performances of p–i–n amorphous silicon germanium (a-SiGe: H) solar cell modules
were investigated post annealing at different temperatures. When the annealing temperature …

The nanostructure of hydrogenated amorphous silicon germanium alloys, a-Si1− xGex: H
(x∼ 0.15 to 0.57), prepared by different plasma enhanced chemical vapor deposition …

We grow hydrogenated amorphous silicon–germanium alloys by the hot-wire chemical
vapor deposition (HWCVD) technique at deposition rates between 0.5 and 1.4 nm per …

The nanostructures of hydrogenated amorphous silicon germanium alloys, a-Si1− xGex: H
(x∼ 0.5 to 0.7), prepared by different plasma enhanced chemical vapor deposition …

The optical and structural properties of hydrogenated amorphous silicon–germanium (a-Si
1− x Ge x: H) films, deposited at high growth rate by radio-frequency (RF) glow discharge on …