Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
Effect of sputtering power and thickness ratios on the materials properties of Cu–W and Cu–Cr bilayer thin films using high power impulse magnetron and DC …
TAK Nguyen, Y Huang, NM Dang, CH Lin… - Journal of Vacuum …, 2024 - pubs.aip.org
This study investigates the influence of Cu thickness ratios on the structural, morphological,
and mechanical properties of sputtered Cu–W and Cu–Cr bilayer thin films. Employing high …
and mechanical properties of sputtered Cu–W and Cu–Cr bilayer thin films. Employing high …
SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering
The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a
limit with SiO 2 as a gate dielectric material. Introducing high-k dielectric materials as a …
limit with SiO 2 as a gate dielectric material. Introducing high-k dielectric materials as a …
Microstructural, surface and interface properties of zirconium doped HfO2 thin films grown by RF co-sputtering technique
Hf 1-x Zr x O 2 gate dielectric thin films were deposited on Si (100) substrates by RF reactive
co-sputtering with the variation in the RF power of zirconium target. The compositional …
co-sputtering with the variation in the RF power of zirconium target. The compositional …
Investigation of Structural and Electrical Properties of Ta2O5 Thin Films with Sputtering Parameters for Microelectronic Applications
Abstract Tantalum oxide (Ta2O5) thin film is considered as an alternative dielectric layer in
both microelectronics and MEMS devices due to its high dielectric constant, high breakdown …
both microelectronics and MEMS devices due to its high dielectric constant, high breakdown …
Modulation of microstructure and interface properties of co-sputter derived Hf1−xTixO2 thin films with various Ti content
Hf 1− x Ti x O 2 dielectric thin films were deposited on Si (100) substrates by RF reactive co-
sputtering with the variation in RF power of Ti target. The compositional, morphological …
sputtering with the variation in RF power of Ti target. The compositional, morphological …
Investigation of surface and interface properties of RF sputtered calcium copper titanate thin films on silicon substrate
Structural and electrical properties of RF sputtered Calcium copper titanate (CCTO) thin films
have been investigated. CCTO thin films were sputtered on p-type silicon (100) substrate by …
have been investigated. CCTO thin films were sputtered on p-type silicon (100) substrate by …
Morphological and electrical properties of RF sputtered calcium copper titanate thin films with the incorporation of intermediate layer
In this research work, an attempt has been undertaken to improve the structural,
morphological and electrical properties of RF sputtered CCTO thin films with the …
morphological and electrical properties of RF sputtered CCTO thin films with the …
Negative differential resistance (NDR) behavior of nickel oxide (NiO) based metal-insulator-semiconductor structures
This work presents a metal-insulator-semiconductor (MIS) structure based on nickel oxide
(NiO) showing negative differential resistance (NDR) properties. The Ni/NiO/HfO _2/Ni …
(NiO) showing negative differential resistance (NDR) properties. The Ni/NiO/HfO _2/Ni …
NiOx Based Device Structures
K Khan - 2016 - rave.ohiolink.edu
Semiconducting oxides are really important for their use in optoelectronics and photo
catalytic applications. While other semiconducting oxides (eg, ZnO, TiO 2, and SnO 2) have …
catalytic applications. While other semiconducting oxides (eg, ZnO, TiO 2, and SnO 2) have …