In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the capping process have been compared structurally and optically. They are based …

A procedure to quantitatively analyse the relationship between the wetting layer (WL) and
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the
wave functions. We have studied theoretically the fine structure splitting in InAs quantum …

AlInAs/AlGaAs quantum dots (QDs) have emerged as excellent emitters across the visible
spectral range, showcasing highly tunable electronic properties through variations in …

The experimental ascertainment of band alignment type for semiconductor heterostructures
with diffused interfaces is discussed. A method based on the analysis of the spectral shift of …

We study the polarization response of the emission from type-II GaAsSb capped InAs
quantum dots. The theoretical prediction based on the calculations of the overlap integrals of …

In this work, we have studied structural, electronic and optical properties of InAs/InP
quantum dots (QDs). Our results were compared with the theoretical and experimental …

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum
dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures …

External control over the electron and hole wavefunctions geometry and topology is
investigated in a pin diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with …

We investigate how the voltage control of the exciton lateral dipole moment induces a
transition from singly to doubly connected topology in type-II In As/Ga As x Sb 1− x quantum …