The striking photoluminescence properties of porous silicon have attracted considerable
research interest since their discovery in 1990. Luminescence is due to excitonic …

Abstract Bulk Silicon (Si) possesses an indirect bandgap and low surface area to volume
ratio. Porous silicon (PSi), a derived material of Si, overcomes drawbacks of Si, and …

We review previous X-ray diffraction experiments on porous silicon, giving a determination
of porous layer strain. The results of our X-ray measurements of the strain of as-formed and …

The lattice distortion and the microstructure of porous silicon (PS) layers, produced on p-type
Si wafers with various electrical resistivities, have been investigated by means of X-ray multi …

Layer transfer processes yield Si films of high electronic quality on low-cost non-Si carriers
such as glass: a crystalline Si film grows on a Si–substrate wafer, is detached from that …

The microstructure of porous silicon layers has been studied by means of x‐ray diffraction.
Using a double‐crystal diffractometer, the observed diffraction patterns give directly the …

Рассмотрены тепловыделение и тепловые поля в пластинах кремния, германия,
арсенида галлия, антимонида индия, а также в пленочных структурах на их основе …

A systematic study of porous silicon anodic oxidation is reported. We have studied the
evolution of the lattice parameter versus oxidation levels for p‐and p+‐type materials by …

The annealing effect on the lattice distortion of porous silicon (PS) layers have been studied
mainly by X-ray multiple-crystal diffractometry and infrared spectroscopy. The lattice spacing …

In situ synchrotron radiation measurements of porous silicon (PS) strain have been
performed during ultrahigh vacuum (UHV) thermal annealing. For ap sample, the initial …