SiC sensors: a review

NG Wright, AB Horsfall - Journal of Physics D: Applied Physics, 2007 - iopscience.iop.org
Silicon carbide has attracted considerable attention in recent years as a potential material
for sensor devices. This paper reviews the current status of SiC technology for a wide range …

Advances in silicon carbide science and technology at the micro-and nanoscales

R Maboudian, C Carraro, DG Senesky… - Journal of Vacuum …, 2013 - pubs.aip.org
Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …

Silicon carbide for integrated photonics

A Yi, C Wang, L Zhou, Y Zhu, S Zhang, T You… - Applied Physics …, 2022 - pubs.aip.org
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

V Cimalla, J Pezoldt, O Ambacher - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

Emerging SiC applications beyond power electronic devices

F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck… - Micromachines, 2023 - mdpi.com
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

Low voltage nanoelectromechanical switches based on silicon carbide nanowires

XL Feng, MH Matheny, CA Zorman, M Mehregany… - Nano …, 2010 - ACS Publications
We report experimental demonstrations of electrostatically actuated, contact-mode
nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs) …

Accelerated ICP etching of 6H-SiC by femtosecond laser modification

Y Huang, F Tang, Z Guo, X Wang - Applied Surface Science, 2019 - Elsevier
A method for ultrafast etching of single crystal 6H-SiC by integrating a femtosecond laser
modification and inductively coupled plasma (ICP) etching is proposed in this paper. The …

Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

F Zhao, MM Islam, CF Huang - Materials Letters, 2011 - Elsevier
In this paper, we report on a novel surface micromachining process technology for the
fabrication of microelectromechanical systems in SiC. Single-crystal SiC suspended …

Silicon carbide in microsystem technology—Thin Film versus bulk material

MA Fraga, M Bosi, M Negri - Advanced silicon carbide devices …, 2015 - books.google.com
This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with
an introduction into the wide bandgap (WBG) materials and the properties that make them …

A 350° C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests

X Fang, C Wu, Y Zhao, Z Jiang, W Rong… - Journal of …, 2020 - iopscience.iop.org
It has been a challenge to develop pressure sensors that can work in harsh environments. In
this work, a piezoresistive n-type 4H-SiC pressure sensor is demonstrated, capable of …