This review paper discusses several key issues associated with deep submicron CMOS
devices as well as advanced semiconductor materials in ionizing radiation environments …

Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar linear transistors was first identified
in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994 …

Electronic devices in space environments can contain numerous types of oxides and
insulators. Ionizing radiation can induce significant charge buildup in these oxides and …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is
strongly gate-length dependent. The current drive decreases during irradiation, and the …

Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …

A comprehensive model is presented which enables the effects of ionizing radiation on bulk
CMOS devices and parasitic structures to be simulated with closed form functions. The …

This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …