Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments
FlexAL™) that includes an inductively coupled plasma source and a load lock capable of …

The growth of ultrathin TiN films by plasma-assisted atomic layer deposition (PA-ALD) was
studied by in situ spectroscopic ellipsometry (SE). In between the growth cycles consisting of …

A HfO2 film was grown via atomic layer deposition (ALD) with a discrete feeding method
(DFM), called DF-ALD, and its physical, chemical, and electrical properties were studied. In …

In this work, hafnium oxide (HfO 2) thin films have been grown on (0 0 1) Si substrates by
two different Atomic Layer Deposition (ALD) methods, namely thermal and plasma …

Plasma-enhanced atomic layer deposition (PEALD) is one of the most widely adopted
deposition methods in the semiconductor industry. It is chosen largely due to its superior …

In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon (SONOS)-like
memory using an HfO 2 as charge trapping layer deposited by a very simple sol-gel spin …

Plasma-enhanced atomic layer deposition (PEALD) has demonstrated its superiority at
coating ultra-conformal high dielectric thin-films, which are essential to the fin field-effect …