The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Two dimensional (2D) semiconductors have been established as promising candidates to
break through the short channel effect that existed in Si metal-oxide-semiconductor field …

The academic and industrial communities have proposed two-dimensional (2D) transition
metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors …

The increasing demand for computation requires the development of energy-efficient logic
devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are …

There is a great attention of scaling down transistor based on 2D materials. Although gate-
all-around (GAA) structure based on silicon has been simulated, the GAA structure …

Abstract In this article, a 0.7 nm thick monolayer MoS 2 nanosheet gate-all-around field
effect transistors (NS-GAAFETs) with conformal high-κ metal gate deposition are …

For several decades after Moore's Law is proposed, there is a continuous effort to reduce the
feature‐size of transistors. However, as the size of transistors continues to decrease …

This study simulates and compares symmetric and asymmetric MoS 2 nanosheet transistor
structures. The results show that the asymmetric MoS 2 nanosheet transistor achieves …

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over
FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is …

As the size of the transistor scales down, this strategy has confronted challenges because of
the fundamental limits of silicon materials. Besides, more and more energy and time are …