Advancements in materials, devices, and integration schemes for a new generation of neuromorphic computers

S Najmaei, AL Glasmann, MA Schroeder, WL Sarney… - Materials Today, 2022 - Elsevier
The slowing pace of performance improvements in modern processors along with the
breakdown of power scaling forecasts an imminent end to the traditional transistor scaling …

Tri-state GNRFET-based fast and energy-efficient ternary multiplier

SU Haq, E Abbasian, T Khurshid, H Fathi… - … -International Journal of …, 2024 - Elsevier
As silicon field-effect transistors encounter increasing scaling challenges, digital system
designers are shifting their attention towards multi-valued logic (MVL), specifically ternary …

Roadmap for network-based biocomputation

FC van Delft, A Månsson, H Kugler, T Korten… - Nano …, 2022 - iopscience.iop.org
Network-based biocomputation (NBC) is an alternative, parallel computation approach that
can potentially solve technologically important, combinatorial problems with much lower …

CNT-PUFs: Highly robust physical unclonable functions based on carbon nanotubes

S Böttger, F Frank, NA Anagnostopoulos… - 2023 IEEE 23rd …, 2023 - ieeexplore.ieee.org
In this work, we explore a highly robust and unique Physical Unclonable Function (PUF)
based on the stochastic assembly of single-walled Carbon NanoTubes (CNTs) integrated by …

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

JN Ramos-Silva, A Pacheco-Sanchez… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
An experimentally-calibrated carbon nanotube compact transistor model has been used
here to design two high-frequency (HF) circuits with two different functionalities each: a …

A Physics-Based Compact Model for the Static Drain Current in Heterojunction Barrier CNTFETs—Part I: Barrier-Related Current

M Annamalai, M Schröter - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
A physics-based compact analytical formulation for the static drain current in heterojunction
barrier (HB) carbon nanotube field-effect transistors is derived by incorporating the tunneling …

Metal contact induced unconventional field effect in metallic carbon nanotubes

G Fedorov, R Hafizi, V Semenenko, V Perebeinos - Nanomaterials, 2023 - mdpi.com
One-dimensional carbon nanotubes (CNTs) are promising for future nanoelectronics and
optoelectronics, and an understanding of electrical contacts is essential for developing these …

CNT-PUFs: highly robust and heat-tolerant carbon-nanotube-based physical unclonable functions

F Frank, S Böttger, N Mexis, NA Anagnostopoulos… - Nanomaterials, 2023 - mdpi.com
In this work, we explored a highly robust and unique Physical Unclonable Function (PUF)
based on the stochastic assembly of single-walled Carbon NanoTubes (CNTs) integrated …

A compact physical expression for the static drain current in heterojunction barrier CNTFETs

M Annamalai, M Schröter - Solid-State Electronics, 2023 - Elsevier
A physics based compact expression for the static drain current in carbon nanotube field-
effect transistors (CNTFETs) is presented, which takes into account the impact of …

Bridging the gap: Perspectives of nanofabrication technologies for application-oriented research

M Baum, C Meinecke, T Blaudeck, C Helke… - Journal of Vacuum …, 2021 - pubs.aip.org
Next to powders, inks, and microelectronics, many technologies that carry the attribute nano
in their name are still waiting for their breakthrough and wide acceptance in engineering and …