Currently several type of energy sources exist in the modern world. The energy makes
people's life more comfortable, easy, time savings, fast transformation of information and …

Al 1-x In x N films allow the bandgap to be adjusted in a wide range, which is fascinating for
optoelectronic applications, especially in ultraviolet–visible and wavelength-selective …

In this study, Al-rich InAlN thin films were grown at different substrate temperatures (T s) by
plasma-assisted dual source reactive evaporation and effects of the parameter on indium …

Al 1− x In x N, a III-nitride semiconductor material, is currently of great research interest due
to its remarkable physical properties and chemical stability. When the Al and In compositions …

Laser-induced microscale reactions are an excellent means to obtain controllable, small-
scale insights into nanomaterial properties. Importantly, the opportunity for a comprehensive …

Abstract Indium oxide (In 2 O 3) based heterojunction thin films with enhanced visible light
photoelectrochemical (PEC) performance were successfully grown on c-Si substrate by …

A series of indium nitride (InN) thin films have been grown on sapphire substrates by
molecular beam epitaxy (MBE) technology under different growth conditions of temperature …

Thin films of indium nitride were deposited on glass substrates using pulsed direct current
(DC) magnetron sputtering with various power ranging from 100 W to 150 W. The X-ray …

In x Ga 1-x N films with tunable bandgap hold significant potential for photoelectric
applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a …

In this study, a radio-frequency plasma-assisted chemical beam epitaxy (RF-PACBE) system
with low growing temperatures was used to grow high-quality indium nitride (InN) thin films …