Atomically precise manufacturing of silicon electronics

J Pitters, J Croshaw, R Achal, L Livadaru, S Ng… - ACS …, 2024 - ACS Publications
Atomically precise manufacturing (APM) is a key technique that involves the direct control of
atoms in order to manufacture products or components of products. It has been developed …

Binary atomic silicon logic

T Huff, H Labidi, M Rashidi, L Livadaru, T Dienel… - Nature …, 2018 - nature.com
It has been proposed that miniature circuitry will ultimately be crafted from single atoms.
Despite many advances in the study of atoms and molecules on surfaces using scanning …

Carbon defect qubit in two-dimensional WS2

S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali - Nature communications, 2022 - nature.com
Identifying and fabricating defect qubits in two-dimensional semiconductors are of great
interest in exploring candidates for quantum information and sensing applications. A …

Two-dimensional pnictogen honeycomb lattice: structure, on-site spin-orbit coupling and spin polarization

J Lee, WC Tian, WL Wang, DX Yao - Scientific Reports, 2015 - nature.com
Because of its novel physical properties, two-dimensional materials have attracted great
attention. From first-principle calculations and vibration frequencies analysis, we predict a …

Atomic white-out: Enabling atomic circuitry through mechanically induced bonding of single hydrogen atoms to a silicon surface

TR Huff, H Labidi, M Rashidi, M Koleini, R Achal… - ACS …, 2017 - ACS Publications
We report the mechanically induced formation of a silicon–hydrogen covalent bond and its
application in engineering nanoelectronic devices. We show that using the tip of a …

SiQAD: A design and simulation tool for atomic silicon quantum dot circuits

SSH Ng, J Retallick, HN Chiu, R Lupoiu… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and
simulation of computational assemblies of atomic silicon quantum dots. SiQAD consists of …

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

M Cowie, PC Constantinou, NJ Curson… - Proceedings of the …, 2024 - pnas.org
We use electrostatic force microscopy to spatially resolve random telegraph noise at the
Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at …

Electrostatic landscape of a hydrogen-terminated silicon surface probed by a moveable quantum dot

TR Huff, T Dienel, M Rashidi, R Achal, L Livadaru… - ACS …, 2019 - ACS Publications
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to
examine how irregularities in the local environment can affect device functionality. Here, we …

Time-resolved single dopant charge dynamics in silicon

M Rashidi, JAJ Burgess, M Taucer, R Achal… - Nature …, 2016 - nature.com
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the
effects of single dopants be clarified. Beyond providing insight into functions and limitations …

Tip-induced passivation of dangling bonds on hydrogenated Si (100)-2× 1

N Pavliček, Z Majzik, G Meyer, L Gross - Applied Physics Letters, 2017 - pubs.aip.org
Using combined low temperature scanning tunneling microscopy and atomic force
microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling …