It has been proposed that miniature circuitry will ultimately be crafted from single atoms. Despite many advances in the study of atoms and molecules on surfaces using scanning …
Identifying and fabricating defect qubits in two-dimensional semiconductors are of great interest in exploring candidates for quantum information and sensing applications. A …
Because of its novel physical properties, two-dimensional materials have attracted great attention. From first-principle calculations and vibration frequencies analysis, we predict a …
We report the mechanically induced formation of a silicon–hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a …
This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of computational assemblies of atomic silicon quantum dots. SiQAD consists of …
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at …
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we …
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations …
Using combined low temperature scanning tunneling microscopy and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling …