Quantised Hall effect
H Aoki - Reports on Progress in Physics, 1987 - iopscience.iop.org
A review of the quantised Hall effect is given. The author surveys experiments and theories
on the normal and fractional quantum Hall effect including recent developments. As a …
on the normal and fractional quantum Hall effect including recent developments. As a …
A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
L Esaki - IEEE Journal of Quantum Electronics, 1986 - ieeexplore.ieee.org
Following the past seventeen-year developmental path in the research of semiconductor
superlattices and quantum wells, significant milestones are presented with emphasis on …
superlattices and quantum wells, significant milestones are presented with emphasis on …
Band offsets in semiconductor heterojunctions
TY Edward, JO McCaldin, TC McGill - Solid state physics, 1992 - Elsevier
Publisher Summary This chapter presents an overview of several theoretical approaches
and experimental measurement techniques for determining band offset values and discuss …
and experimental measurement techniques for determining band offset values and discuss …
Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators
Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet
gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non …
gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non …
Transport properties of a 3D topological insulator based on a strained high-mobility HgTe film
DA Kozlov, ZD Kvon, EB Olshanetsky, NN Mikhailov… - Physical review …, 2014 - APS
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers
featuring a high mobility of μ∼ 4× 1 0 5 cm 2/V· s. By means of a top gate, the Fermi energy …
featuring a high mobility of μ∼ 4× 1 0 5 cm 2/V· s. By means of a top gate, the Fermi energy …
Graphene for CMOS and beyond CMOS applications
SK Banerjee, LF Register, E Tutuc… - Proceedings of the …, 2010 - ieeexplore.ieee.org
Owing in part to complementary metal–oxide–semiconductor (CMOS) scaling issues, the
semiconductor industry is placing an increased emphasis on emerging materials and …
semiconductor industry is placing an increased emphasis on emerging materials and …
Two-dimensional electron-hole system in a HgTe-based quantum well
ZD Kvon, EB Olshanetsky, DA Kozlov, NN Mikhailov… - JETP Letters, 2008 - Springer
A two-dimensional electron-hole system consisting of light high-mobility electrons with a
density of N s=(4–7)× 10 10 cm− 2 and a mobility of μ n=(4–6)× 10 5 cm 2/V s and heavier …
density of N s=(4–7)× 10 10 cm− 2 and a mobility of μ n=(4–6)× 10 5 cm 2/V s and heavier …
[图书][B] The quantum Hall effects: integral and fractional
T Chakraborty, P Pietiläinen - 2013 - books.google.com
The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981
by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical …
by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical …
Time-resolved counterpropagating edge transport in the topological insulating phase
We have investigated the time-resolved low-energy charge dynamics in counterpropagating
edge channels formed in the quantum Hall regime of an electron-hole bilayer system in …
edge channels formed in the quantum Hall regime of an electron-hole bilayer system in …
Valley-polarized quantum Hall phase in a strain-controlled Dirac system
In multivalley systems, the valley pseudospin offers rich physics going from encoding of
information by its polarization (valleytronics), to exploring novel phases of matter when its …
information by its polarization (valleytronics), to exploring novel phases of matter when its …