A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Measurement and analysis of SiC-MOSFET threshold voltage shift
Silicon carbide power MOSFETs are used in numerous studies to improve the efficiency or
the performance of power electronic converters. However, the gate-oxide technology …
the performance of power electronic converters. However, the gate-oxide technology …
A structural based thermal model description for vertical SiC power MOSFETs under fault conditions
A Maerz, T Bertelshofer… - Active and Passive …, 2016 - Wiley Online Library
The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly
influences the requirements for device protection circuits for these devices in power …
influences the requirements for device protection circuits for these devices in power …
The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail
XG Wei, YL An, HY Xu, BZ Wang, Q Guo… - Key Engineering …, 2023 - Trans Tech Publ
Short circuit characteristics of 4H-SiC MOSFETs with different channel lengths are studied in
this work. The peak drain-source current during the short-circuit period is measured. These …
this work. The peak drain-source current during the short-circuit period is measured. These …
Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers
C Raynaud, ML Locatelli, JF Mogniotte… - Materials Science and …, 2021 - Elsevier
Thick oxides deposited on 4H-SiC epilayers to form Metal-Oxide-Semiconductor capacitors
have been studied by Capacitance-Voltage (CV) and Thermally Stimulated Ionic Current …
have been studied by Capacitance-Voltage (CV) and Thermally Stimulated Ionic Current …
Robustness study of 1700 V 45 mΩ SiC MOSFETs
The threshold voltage instability is a main reliability issue of Silicon Carbide MOSFET
transistors. It is a critical parameter when it comes to give a failure in time rate for industrial …
transistors. It is a critical parameter when it comes to give a failure in time rate for industrial …