The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys
(SDAs) by molecular beam epitaxy for photovoltaic application were studied by space …

The origin of a N-related recombination center (E1), at around 0.33 eV below the conduction
band minimum (CBM) of chemical beam epitaxy (CBE) grown GaAsN, is discussed based …

Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon
electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the …

Isochronal and isothermal annealing treatments were carried out on GaAsN films grown by
chemical beam epitaxy to clarify the evolution of a nonradiative recombination center, at an …

The hole traps associated with high background doping in p-type GaAsN grown by chemical
beam epitaxy are studied based on the changes of carrier concentration, junction …

We correlate the structural properties of aluminium‐based dilute nitrides to their electrical
properties. The effect of annealing on the carrier density and the mobility is measured on …

To explore the origin of low conversion efficiency of GaAsN solar cells, the effects from a key
deep level (E1) at about 0.3–0.4 eV below the conduction band and interface states …

The origin of N–H related local vibration modes (LVMs) in GaAsN grown by chemical beam
epitaxy is discussed on the basis of the change in peak intensity caused by annealing. The …

The majority and minority carrier traps in GaAsN grown by chemical beam epitaxy (CBE)
and their relationships with the electrical properties of the materials and solar cells are …

Multi-junction solar cells based on III-V compounds have reached very high power
conversion efficiencies (46%). However, the fabrication methods that are generally used are …