Dielectrics for terahertz metasurfaces: Material selection and fabrication techniques

RT Ako, A Upadhyay… - Advanced Optical …, 2020 - Wiley Online Library
Manipulation of terahertz radiation opens new opportunities that underpin application areas
in communication, security, material sensing, and characterization. Metasurfaces employed …

Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

Z Wang - Microelectronic Engineering, 2019 - Elsevier
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

Wafer-level hermetically sealed silicon photonic MEMS

G Jo, P Edinger, SJ Bleiker, X Wang… - Photonics …, 2022 - opg.optica.org
The emerging fields of silicon (Si) photonic micro–electromechanical systems (MEMS) and
optomechanics enable a wide range of novel high-performance photonic devices with ultra …

Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding

H Park, H Seo, SE Kim - Scientific reports, 2020 - nature.com
An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma
treatment offers the advantages of having no defect formation, such as pinholes, by …

Development of 3D wafer level hermetic packaging with through glass vias (TGVs) and transient liquid phase bonding technology for RF filter

Z Chen, D Yu, Y Zhong - Sensors, 2022 - mdpi.com
The development of 5G mobile communication created the need for high-frequency
communication systems, which require vast quantities of radio frequency (RF) filters with a …

The nucleation-controlled intermetallic grain refinement of Cu-Sn solid-liquid interdiffusion wafer bonding joints induced by addition of Ni particles

ZL Li, H Tian, HJ Dong, XJ Guo, XG Song, HY Zhao… - Scripta Materialia, 2018 - Elsevier
In this study, Ni particle was validated as an effective grain refiner for the Cu-Sn solid-liquid
interdiffusion (SLID) wafer bonding joints, which induced a dispersive non-interfacial …

Time-dependent evolution study of Ar/N2 plasma-activated Cu surface for enabling two-step Cu-Cu direct bonding in a non-vacuum environment

L Hu, SCK Goh, J Tao, YD Lim, P Zhao… - ECS Journal of Solid …, 2021 - iopscience.iop.org
In this paper, a two-step copper-copper direct bonding process in a non-vacuum
environment is reported. Time-dependent evolution of argon/nitrogen plasma-activated …

Wafer level solid liquid Interdiffusion bonding: formation and evolution of microstructures

V Vuorinen, H Dong, G Ross, J Hotchkiss… - Journal of Electronic …, 2021 - Springer
Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase
bonding, is becoming an increasingly attractive method for industrial usage since it can …

Thin film encapsulation for RF MEMS in 5G and modern telecommunication systems

A Persano, F Quaranta, A Taurino, PA Siciliano… - Sensors, 2020 - mdpi.com
In this work, SiNx/a-Si/SiNx caps on conductive coplanar waveguides (CPWs) are proposed
for thin film encapsulation of radio-frequency microelectromechanical systems (RF MEMS) …

Glass frit jetting for advanced wafer-level hermetic packaging

A Roshanghias, J Bardong, A Binder - Materials, 2022 - mdpi.com
Glass frit bonding is a widely used technology to cap and seal micro-electromechanical
systems on the wafer level using a low melting point glass. Screen printing is the main …