[PDF][PDF] Современное состояние и новые направления полупроводниковой ИК-фотоэлектроники (Часть 1)
МД Корнеева, ВП Пономаренко… - Прикладная …, 2011 - applphys.orion-ir.ru
Инфракрасная фотоэлектроника вместе с фотоэлектроникой видимого диапазона по-
прежнему остается одним из ключевых направлений современного оптического …
прежнему остается одним из ключевых направлений современного оптического …
[PDF][PDF] 碲镉汞近年来的研究进展
王忆锋， 唐利斌 - 红外技术, 2009 - hwjs.nvir.cn
第三代红外系统的主要特点包括更多的像素, 更高的帧频, 更好的温度分辨率,
双色甚至多色探测以及其他(芯) 片上信号处理功能. 尽管面临着其他材料例如相近的汞合金 …
双色甚至多色探测以及其他(芯) 片上信号处理功能. 尽管面临着其他材料例如相近的汞合金 …
Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors
V Damnjanović, VP Ponomarenko… - … science and technology, 2008 - iopscience.iop.org
The photo-electric characteristics of tunnel MIS photo-detectors based on Hg 1− x Cd x Te
for x≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation …
for x≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation …
Machined surface characteristics and removal mechanism of soft and brittle solids
Surface characteristics of CZT wafers machined using wire sawing, free abrasives lapping
and polishing and ultra-precision grinding were investigated. Wire sawing resulted in the …
and polishing and ultra-precision grinding were investigated. Wire sawing resulted in the …
[PDF][PDF] Deformation characteristics and removal mechanisms of soft-brittle solids: single crystals of mercury cadmium telluride (HgCdTe) and cadmium zinc telluride …
R Irwan - 2015 - core.ac.uk
Mechanical properties, deformation and material removal characteristics of two II-VI
semiconductor compounds, mercury cadmium telluride (HgCdTe) and cadmium zinc …
semiconductor compounds, mercury cadmium telluride (HgCdTe) and cadmium zinc …
Strong magnetic field effect on over-the-barrier transport in Pb-p-Hg1− xCdxTe Schottky barriers
VF Radantsev, VV Zavyalov - Semiconductor science and …, 2013 - iopscience.iop.org
It is usually believed that the over-the-barrier current in Schottky barriers (SB) on p-type
semiconductor is controlled by heavy holes. However, there is an additional potential barrier …
semiconductor is controlled by heavy holes. However, there is an additional potential barrier …
Investigation of dielectric — Semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te
V Damnjanović, JM Elazar - 2010 27th International …, 2010 - ieeexplore.ieee.org
In this paper we describes technological processes for the stabilization of interface between
p-Hg 1-x Cd x and dielectric. Native oxide and native fluoride, as well as Al 2 O 3 and SiO 2 …
p-Hg 1-x Cd x and dielectric. Native oxide and native fluoride, as well as Al 2 O 3 and SiO 2 …