Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods
Abstract We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the
simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co …
simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co …
[PDF][PDF] Amphoteric phosphorus doping for stable p-type ZnO
A Allenic, W Guo, YB Chen, MB Katz… - ADVANCED …, 2007 - academia.edu
Zinc oxide is a wide bandgap semiconductor with potential applications in optoelectronic
devices. The greatest challenge for these applications, however, remains the fabrication of …
devices. The greatest challenge for these applications, however, remains the fabrication of …
Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical response
Ferroelectricity in ZnO is an unlikely physical phenomenon. Here, we show ferroelectricity in
undoped [001] ZnO nanorods due to zinc vacancies. Generation of ferroelectricity in a ZnO …
undoped [001] ZnO nanorods due to zinc vacancies. Generation of ferroelectricity in a ZnO …
Thermoelectric properties of Al-doped ZnO thin films
We have prepared 2% Al-doped ZnO (AZO) thin films on SrTiO 3 substrates by a pulsed
laser deposition technique at various deposition temperatures (T dep= 300–600° C). The …
laser deposition technique at various deposition temperatures (T dep= 300–600° C). The …
Field-assisted growth of one-dimensional ZnO nanostructures with high defect density
One-dimensional ZnO nanostructures have shown great potential in electronics,
optoelectronics and electromechanical devices owing to their unique physical and chemical …
optoelectronics and electromechanical devices owing to their unique physical and chemical …
Sliding wear and rolling contact fatigue behavior of M50 steel coated with atomic layer deposited lubricious oxide nanolaminates
Atomic layer deposition (ALD) was employed to deposit highly conformal and uniform
nanolaminate coatings of ZnO/Al 2 O 3/ZrO 2/Al 2 O 3 on M50 bearing steel substrates for …
nanolaminate coatings of ZnO/Al 2 O 3/ZrO 2/Al 2 O 3 on M50 bearing steel substrates for …
Dominant ultraviolet electroluminescence from p-ZnO: As/n-SiC (6H) heterojunction light-emitting diodes
Z Shi, X Xia, W Yin, S Zhang, H Wang, J Wang… - Applied Physics …, 2012 - pubs.aip.org
Ultraviolet electroluminescence was demonstrated from a p-ZnO: As/n-SiC (6H)
heterojunction light-emitting diode at room-temperature. The p-ZnO: As was fabricated by …
heterojunction light-emitting diode at room-temperature. The p-ZnO: As was fabricated by …
Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering
Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering
to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi …
to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi …
Metal‐nanoparticle‐coating‐induced enhancement and weakening of resonant Raman scattering in ZnO: effect of surface electric field
HF Liu, A Huang, S Tripathy… - Journal of Raman …, 2011 - Wiley Online Library
Effects of Ag and Ti nanoparticle coatings on resonant Raman scattering in various ZnO thin
films are presented. The longitudinal optical (LO) phonons, irrespective of the ZnO quality …
films are presented. The longitudinal optical (LO) phonons, irrespective of the ZnO quality …
Influence of preparation condition and doping concentration of Fe-doped ZnO thin films: oxygen-vacancy related room temperature ferromagnetism
WG Zhang, B Lu, LQ Zhang, JG Lu, M Fang, KW Wu… - Thin Solid Films, 2011 - Elsevier
Abstract Fe-doped and Fe–Ga co-doped ZnO diluted magnetic semiconductor thin films on
quartz substrate were studied. Rapid annealing enhanced the ferromagnetism (FM) of the …
quartz substrate were studied. Rapid annealing enhanced the ferromagnetism (FM) of the …