In this paper, we investigated the tri-gate In x Ga 1− x As high electron mobility transistors
(HEMTs) with different indium compositions for low noise applications. The tri-gate …

We examine the potential design and performance of 100–300 GHz wireless
communications systems, examine the required transistors performance, and describe our …

We present the design, fabrication, and characterization of InGaAs channel high electron
mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and …

InP channel planar and vertical MOSFETs utilizing atomic layer deposition of a TiN/Ru gate
are fabricated. The performance of the TiN/Ru gate is compared to a Ru-only gate based on …

This paper presents the sensitivity analysis of an AlGaN/GaN single gate MOSHEMT with a
tapered high-κ dielectric with a cavity under the gate for neutral biomolecules. The device …

In 0.71 Ga 0.29 As/InP (12/2 nm) quantum well MOSFETs using sacrificial amorphous silicon
(a: Si) spacers to achieve low parasitic capacitance are fabricated. Radio frequency …

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a
considerable reduction in gate leakage current. Following the natural transistor evolution …

With the advent of things like autonomous vehicles, augmented reality, high-capacity
wireless networks, and high performance computing, the ways in which we sense, process …

With the advent of things like autonomous vehicles, augmented reality, high-capacity
wireless networks, and high performance computing, the ways in which we sense, process …