Droplet epitaxy for advanced optoelectronic materials and devices
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …
many research efforts have been devoted to droplet epitaxy since then, it is only until …
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
MS Claro, I Levy, A Gangopadhyay, DJ Smith… - Scientific reports, 2019 - nature.com
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam
epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs …
epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs …
Method for inducing strain in vertical semiconductor columns
JP Colinge, GS Chang, CH Diaz - US Patent 9,368,619, 2016 - Google Patents
Abstract A vertical Metal-Oxide-Semiconductor (MOS) transistor includes a substrate and a
nano-wire over the substrate. The nano-wire comprises a semiconductor material. An oxide …
nano-wire over the substrate. The nano-wire comprises a semiconductor material. An oxide …
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys
In this paper, we present results obtained by an optical technique, namely, reflectance
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
Epitaxially Self‐Assemblied Quantum Dot Pairs
The present paper reviews the recent efforts and achievements regarding the fabrication
techniques of self‐assembled quantum dot pairs. Quantum dot pairs, the simplest but most …
techniques of self‐assembled quantum dot pairs. Quantum dot pairs, the simplest but most …
Effects of spatial confinement and layer disorder in photoluminescence of GaAs1− xBix/GaAs heterostructures
The structural and optical properties of a set of high-quality GaAs 1− x Bi x/GaAs quantum
well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied …
well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied …
Inducing localized strain in vertical nanowire transistors
JP Colinge, GS Chang, CH Diaz - US Patent 9,466,668, 2016 - Google Patents
A device includes a semiconductor Substrate and a vertical nano-wire over the
semiconductor substrate. The vertical nano-wire includes a bottom source? drain region, a …
semiconductor substrate. The vertical nano-wire includes a bottom source? drain region, a …
Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
Devices, and methods of forming Such devices, having a material that is semimetal when in
bulk but is a semicon ductor in the devices are described. An example structure includes a …
bulk but is a semicon ductor in the devices are described. An example structure includes a …
Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy
method, and their density can be controlled from 1.1× 10 10 to 1.1× 10 11 cm-2 by various …
method, and their density can be controlled from 1.1× 10 10 to 1.1× 10 11 cm-2 by various …
Electronic and quantum phase coherence properties of bismuth thin films
M Rudolph, JJ Heremans - Applied Physics Letters, 2012 - pubs.aip.org
We present a method to deposit bulk-like Bi films by thermal evaporation and study the
electrical, quantum coherence, and physical properties. A two stage growth procedure was …
electrical, quantum coherence, and physical properties. A two stage growth procedure was …