Integration of III-V lasers on Si for Si photonics
Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …
Silicon photonics: a review of recent literature
R Soref - Silicon, 2010 - Springer
This review presents a distillation of important results published during 2009 in major
journals and conference proceedings. Although the commercial promise of silicon photonics …
journals and conference proceedings. Although the commercial promise of silicon photonics …
III-V/Si hybrid photonic devices by direct fusion bonding
Monolithic integration of III-V compound semiconductors on silicon is highly sought after for
high-speed, low-power-consumption silicon photonics and low-cost, light-weight …
high-speed, low-power-consumption silicon photonics and low-cost, light-weight …
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)
Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact
light source with unique advantages of ultralow energy consumption and small footprint for …
light source with unique advantages of ultralow energy consumption and small footprint for …
Integration of III–V materials and Si-CMOS through double layer transfer process
A method to integrate III–V compound semiconductor and SOI-CMOS on a common Si
substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer …
substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer …
Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been
demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal …
demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal …
Recent advances of heterogeneously integrated III–V laser on Si
Due to the indirect bandgap nature, the widely used silicon CMOS is very inefficient at light
emitting. The integration of silicon lasers is deemed as the'Mount Everest'for the full take-up …
emitting. The integration of silicon lasers is deemed as the'Mount Everest'for the full take-up …
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
The integration of III–V semiconductors (eg, GaAs and GaN) and silicon-on-insulator (SOI)-
CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is …
CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is …
Method of manufacturing a substrate
(57) ABSTRACT A method of manufacturing a substrate is disclosed. The method
comprises: providing a first semiconductor sub strate, which includes an at least partially …
comprises: providing a first semiconductor sub strate, which includes an at least partially …
Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects
We demonstrate the continuous-wave operation of lambda-scale embedded active-region
photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The …
photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The …