Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration …
B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader… - Nano …, 2016 - ACS Publications
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III …
Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use …
G Koblmüller, B Mayer, T Stettner… - Semiconductor …, 2017 - iopscience.iop.org
Semiconductor nanowire (NW) lasers provide significant potential to create a new generation of lasers and on-chip coherent light sources by virtue of their ability to operate as …
A Higuera-Rodriguez, B Romeira, S Birindelli… - Nano …, 2017 - ACS Publications
The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However …
Monolithically integrated III–V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III–V …
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their …
Heterostructures (HSs) of two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer a plethora of opportunities in materials science, condensed-matter physics, and device …
J Treu, T Stettner, M Watzinger, S Morkötter… - Nano …, 2015 - ACS Publications
Core–shell nanowires (NW) have become very prominent systems for band engineered NW heterostructures that effectively suppress detrimental surface states and improve …