This article characterizes the thermal behavior of a commercialized silicon carbide (SiC)
power MOSFET module with special concerns on high-temperature operating conditions as …

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is
gradually replacing silicon-based insulated gate bipolar transistor (IGBT) as the switching …

Due to its low loss and high switching frequency, the silicon carbide metal oxide field effect
transistors (SiC mosfet s) are more suitable as switching devices in power inverter for …

Achieving the optimal design of power converters requires a deep understanding of the
system's dissipation elements to meet the desired performance and safety standards. Once …

This article has presented a unified electrothermal behavior modeling method for both
silicon carbide (SiC) metal oxide semiconductor field effect transistor (mosfet) and gallium …

Silicon carbide (SiC) devices can exhibit simultaneously high electro-thermal conductivity
and extremely fast switching. To perform optimal designs showing the benefits of SiC in …

The design of a cooling system is critical in power converters based on wide-bandgap
(WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron …

This paper proposes a preliminary design tool for active power filters'(APFs) solutions to be
applied in offshore oil and gas platforms, where power quality indices are typically low, and …

All-SiC power modules have lately received great attention for multiphase motor propulsion
systems due to their low radiator temperature and high efficiency. However, the application …

This article proposes a fast predictive control method and a small dc-link inductor to
minimize the dc-link current in current-source converter (CSC) based solid-state transformer …