Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of
orders of magnitude, and are widely observed in condensed-matter systems. This article …

A generalization of the local density approximation (LDA) method for systems with strong
Coulomb correlations is described which gives a correct description of the Mott insulators …

We propose a form for the exchange-correlation potential in local-density band theory,
appropriate for Mott insulators. The idea is to use the ''constrained-local-density …

The generalization of the local-density-approximation method for the systems with strong
Coulomb correlations is proposed, which restores the discontinuity in the one-electron …

Band gaps and electronic structure of transition-metal compounds Page 1 VOLUME 55,
NUMBER 4 PHYSICAL REVIEW LETTERS 22 JUL+ 1985 Band Gaps and Electronic Structure …

The electronic structure of transition metal oxides featuring correlated electrons can be
rationalized within the Zaanen-Sawatzky-Allen framework. Following a brief description of …

This book emerged from a close collaboration of the authors which started in the fall of 2000.
Early that year one of us (JS) had joined the Stanford faculty after spending nearly 15 years …

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, ap-type oxide
semiconductor, are inserted between the active organic layer, poly (3-hexylthiophene)(P3HT …

Photoemission and bremsstrahlung-isochromat-spectroscopy data on a cleaved NiO single
crystal are presented and compared to band-and cluster-theory predictions. In contrast to …

The optical study of trivalent 3d transition-metal-oxide compounds (RM O 3) with the
perovskitelike structure has revealed the variation of their electronic structure with the 3d …