Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware
To implement artificial neural networks (ANNs) based on memristor devices, it is essential to
secure the linearity and symmetry in weight update characteristics of the memristor, and …
secure the linearity and symmetry in weight update characteristics of the memristor, and …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
We developed a physical model to fundamentally understand the conductive filament (CF)
formation and growth behavior in the switching layer during electroforming process in the …
formation and growth behavior in the switching layer during electroforming process in the …
Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives
Non-volatile memory devices using organic materials have attracted much attention due to
their excellent scalability, fast switching speed, low power consumption, low cost etc. Here …
their excellent scalability, fast switching speed, low power consumption, low cost etc. Here …
Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
F Wan, Q Wang, T Harumoto, T Gao… - Advanced Functional …, 2020 - Wiley Online Library
Oxide‐based memristor devices are being extensively studied as one of the most promising
technologies for next generation nonvolatile memory and neuromorphic computing …
technologies for next generation nonvolatile memory and neuromorphic computing …
Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse
The enhanced resistive switching (RS) characteristics of the flexible TaO x/InGaZnO (IGZO)-
based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are …
based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are …
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
This work investigates the transition from digital to gradual or analog resistive switching in
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …
Charge transport mechanism in the forming-free memristor based on silicon nitride
AA Gismatulin, GN Kamaev, VN Kruchinin… - Scientific reports, 2021 - nature.com
Nonstoichiometric silicon nitride SiN x is a promising material for developing a new
generation of high-speed, reliable flash memory device based on the resistive effect. The …
generation of high-speed, reliable flash memory device based on the resistive effect. The …
Charge transport and the nature of traps in oxygen deficient tantalum oxide
VA Gritsenko, TV Perevalov… - … applied materials & …, 2018 - ACS Publications
Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion
beam deposition were investigated in order to understand the dominant charge transport …
beam deposition were investigated in order to understand the dominant charge transport …