Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …

Applications of artificial intelligence (AI) necessitate AI hardware accelerators able to
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …

In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …

We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …

STT-MRAM has been demonstrated as a viable embedded non-volatile memory (NVM) with
20-year data retention at 150° C, a high write endurance (> 1M cycles), and the ability to …

Ferroelectric Field Effect Transistors (FeFETs) have spurred increasing interest in both
memories and computing applications, thanks to their CMOS compatibility, low-power …

Bayesian Neural Networks (BayNNs) are powerful tools for making predictions while also
providing uncertainty estimates, a crucial aspect in safety-critical systems. However …

We have comprehensively studied prediction of endurance properties STT-MRAM based on
breakdown voltage. First, by using 8Mb test MRAM chip, we clarified that a scale parameter …

Spin-transfer-torque magnetic random-access memory (STT-MRAM) is a proven technology
for embedded non-volatile memory applications. The backhopping phenomena in STT …