Calibration of the WCT‐100 photoconductance instrument at low conductance
KR McIntosh, JH Guo, MD Abbott… - Progress in …, 2008 - Wiley Online Library
The WCT‐100 photoconductance instrument is used throughout the photovoltaic industry
providing a relatively simple and inexpensive means to assess recombination parameters …
providing a relatively simple and inexpensive means to assess recombination parameters …
The impact of climatic conditions on PV/PVT outcomes
The dynamic behavior of photovoltaics is attributed to their dependence on solar irradiance
levels and their material characteristics which makes them highly affected by temperature …
levels and their material characteristics which makes them highly affected by temperature …
Environmental conditions and its effect on PV performance
MT Chaichan, HA Kazem, MT Chaichan… - … using photovoltaic solar …, 2018 - Springer
As the photovoltaics are fixed outdoor exposed to external meteorological conditions, which
vary from one area to another, the atmospheric condition can be considered as the major …
vary from one area to another, the atmospheric condition can be considered as the major …
[PDF][PDF] Permeability of TiO2 antireflection coatings to damp heat
MC Talló, K McIntosh - … of the 24th European Photovoltaic Solar …, 2009 - researchgate.net
As-deposited TiO2 coatings are found permeable to water vapour under the “damp heat”
conditions of 85 C and 85% relative humidity. They do not, therefore, protect underlying films …
conditions of 85 C and 85% relative humidity. They do not, therefore, protect underlying films …
Protection of Si-SiO2 interfaces from damp heat by overlying SiNx and Si3N4 coatings
X Dai, KR McIntosh - 2010 35th IEEE Photovoltaic Specialists …, 2010 - ieeexplore.ieee.org
PECVD SiN x antireflection coatings are found to suppress the degradation of an underlying
oxide during “damp-heat” exposure. Samples are submitted to 85° C and 85% relative …
oxide during “damp-heat” exposure. Samples are submitted to 85° C and 85% relative …
[图书][B] Integrationstechniken für Feldeffekttransistoren mit halbleitenden Nanopartikeln
K Wolff - 2011 - Springer
Untitled Page 1 Page 2 Karsten Wolff Integrationstechniken für Feldeffekttransistoren mit
halbleitenden Nanopartikeln Page 3 VIEWEG+TEUBNER RESEARCH Page 4 Karsten Wolff …
halbleitenden Nanopartikeln Page 3 VIEWEG+TEUBNER RESEARCH Page 4 Karsten Wolff …
Humidity degradation and repair of ALD Al2O3 passivated silicon
The effect of humidity on boron diffused and undiffused silicon samples passivated by
aluminum oxide (Al 2 O 3) synthesized by plasma-assisted atomic layer deposition (PA …
aluminum oxide (Al 2 O 3) synthesized by plasma-assisted atomic layer deposition (PA …
Investigation of interface properties in oxide passivated boron diffused silicon
Electron paramagnetic resonance (EPR) measurements were employed to observe the
dominant defect at the thermally grown (111) Si–SiO2 interface, namely the Pb center, of …
dominant defect at the thermally grown (111) Si–SiO2 interface, namely the Pb center, of …
Design of a low-cost MEMS monolithically-integrated relative humidity sensor
This paper presents MEMS capacitive-based humidity sensors for monolithic integration with
CMOS electronics. The fabrication process and design of the sensors are described …
CMOS electronics. The fabrication process and design of the sensors are described …
[引用][C] Integrationstechniken für Feldeffekttransistoren mit halbleitenden Nanopartikeln: Einzel-und Multipartikel-Bauelemente
K Wolff - Paderborn, Univ., Diss., 2011