Solid-state diode technology for millimeter and submillimeter-wave remote sensing applications: Current status and future trends

D Cuadrado-Calle, P Piironen… - IEEE Microwave …, 2022 - ieeexplore.ieee.org
Atmospheric data collected through spaceborne millimeter (mm) and submillimeter-wave
(sub-mm-wave) radiometry combined with complex numerical weather prediction models …

The development of frequency multipliers for terahertz remote sensing system

Y Zhang, C Wu, X Liu, L Wang, C Dai, J Cui, Y Li… - Remote Sensing, 2022 - mdpi.com
This paper summarizes the development of novel Schottky-diode-based terahertz frequency
multipliers. The basic structure and manufacturing process of planar Schottky barrier diodes …

Design and fabrication of high performance InGaAs near infrared photodetector

H Liu, J Wang, D Guo, K Shen, B Chen, J Wu - Nanomaterials, 2023 - mdpi.com
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging,
fiber optical communication, and spectroscopy. In this paper, we studied InGaAs …

A physics-based modeling method of THz Schottky diode for circuit simulation

W Zhao, Y Zhao, M Miao - Microelectronics Journal, 2023 - Elsevier
A modeling method for terahertz Schottky diode is proposed based on the special physical
effects of Schottky diode in the terahertz frequency band. In this method, the device is split …

Computer simulation of a surface charge nanobiosensor with internal signal integration

D Dyubo, OY Tsybin - Biosensors, 2021 - mdpi.com
The ionized states of molecular analytes located on solid surfaces require profound
investigation and better understanding for applications in the basic sciences in general, and …

Scalable large signal modeling for GaAs Schottky diode including edge effects and DC/AC dispersion

A Zhang, J Gao - IEEE Transactions on Electron Devices, 2023 - ieeexplore.ieee.org
A compact scalable large signal model for GaAs Schottky diodes including edge effect and
dc/ac dispersion is proposed in this article. The scalable rules for extrinsic resistance and …

InGaAs/InP Schottky barrier diode with submicron T-shaped contact and Cut-Off frequency above 9 THz

X Liu, Y Zhang, H Wang, C Wu, H Wei, Y Xu… - Infrared Physics & …, 2022 - Elsevier
A high-performance terahertz InP Schottky Barrier Diode (SBD) with a submicron T-shaped
contact structure featuring a high theoretical cut-off frequency of 9.0 THz is reported in this …

Mixers

X Ke - Handbook of Optical Wireless Communication, 2024 - Springer
Mixer is an indispensable component in electronic communication system, and it is the
frontend circuit of heterodyne receiver and microwave measuring instrument, which is used …

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

RA Peña, B Orfao, I Íñiguez-de-la-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The hysteresis cycles observed in the reverse leakage current measured at low
temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied …

Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

B Orfao, BG Vasallo, S Pérez, J Mateos… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The influence of passivation on the edge effects (EEs) present in the capacitance-voltage
(CV) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is …