We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots
(QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm …

Semiconductor nanocrystals hybridized with functional ligands represent an important new
class of composite nanomaterials. The development of these new nanoscale building blocks …

We used a strain compensation technique to fabricate highly stacked InAs quantum-dot (QD)
structures on InP (311) B substrates. We stacked 60 layers of InAs QDs without degrading …

High temperature photoluminescence up to 100 C was demonstrated from the p-doped ten-
layer In As∕ In Ga As quantum dot (QD) laser structure. 1.3 μ m InAs QD lasers were …

Due to their delta-like density of states, quantum dots (QDs) were expected to improve laser
device performances with respect to quantum wells (QWs). Nevertheless, some important …

We realized a triple-stacked 1.3-mum InAs quantum dot (QD) with a high density of 2.4
times10 11 cm-2 and a high uniformity of below 24 meV that employs an As 2 source and a …

We demonstrate persistent high degrees of spin polarization (SPD) up to 70% during light
emission in (In 1− x Ga x) As quantum-dot–well (QD–QW) hybrid nanosystems, where QD …

This work systematically investigated the optical and structural properties of multilayer
electronic vertically coupled InAs/GaAs quantum dot (QDs) structures grown by molecular …

A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs
quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked …

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser
diodes fabricated using a strain-compe Page 1 The dependence of the characteristic …