Review of light-induced degradation in crystalline silicon solar cells

J Lindroos, H Savin - Solar Energy Materials and Solar Cells, 2016 - Elsevier
Although several advances have been made in the characterization and the mitigation of
light-induced degradation (LID), industrial silicon solar cells still suffer from different types of …

Physics of copper in silicon

AA Istratov, ER Weber - Journal of The Electrochemical Society, 2001 - iopscience.iop.org
This article reviews the progress made in the studies of copper in silicon over the last
several years and puts forward a comprehensive model of the behavior of copper in silicon …

Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules

K Nakayashiki, J Hofstetter… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We identify two engineering solutions to mitigate light-induced degradation (LID) in p-type
multicrystalline silicon passivated emitter and rear cells, including modification of …

Nickel: A very fast diffuser in silicon

J Lindroos, DP Fenning, DJ Backlund… - Journal of applied …, 2013 - pubs.aip.org
Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the
potential to create highly recombination-active precipitates in silicon. For nearly three …

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

A Lennon, J Colwell, KP Rodbell - Progress in Photovoltaics …, 2019 - Wiley Online Library
Copper‐plated interconnects were widely adopted for volume manufacture of integrated
circuits after more than a decade of intensive research to demonstrate that use of Cu would …

Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials

M Seibt, R Khalil, V Kveder, W Schröter - Applied Physics A, 2009 - Springer
Predominant dislocation types in solar silicon are dissociated into 30°-and 90°-partials with
reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D …

Recombination activity of copper in silicon

R Sachdeva, AA Istratov, ER Weber - Applied Physics Letters, 2001 - pubs.aip.org
The carrier recombination activity of copper in n-type and p-type silicon has been
investigated. The minority carrier diffusion length has been found to decrease monotonically …

Degradation of copper‐plated silicon solar cells with damp heat stress

J Karas, L Michaelson, K Munoz… - Progress in …, 2020 - Wiley Online Library
Crystalline silicon solar cells with copper‐plated contacts are fabricated, encapsulated in
ethylene‐vinyl acetate (EVA), and subject to extended damp heat stress (85° C and 85 …

Copper related diffusion phenomena in germanium and silicon

H Bracht - Materials science in semiconductor processing, 2004 - Elsevier
This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to
occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial …

Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

T Buonassisi, MA Marcus, AA Istratov… - Journal of Applied …, 2005 - pubs.aip.org
In this study, synchrotron-based x-ray absorption microspectroscopy (μ-XAS) is applied to
identify the chemical states of copper-rich clusters within a variety of silicon materials …