Electrical, kinetic and photoelectrical properties of CuAlMnMg shape memory alloy/n-Si Schottky diode
In this study, the copper-aluminum-manganese-magnesium (Cu–Al–Mn–Mg) shape memory
alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics …
alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics …
The photodetection properties of a ruthenium electro-optic device for organic material-based device industry
The electrical properties and effect of illumination on the photodetection properties were
investigated for the fabricated device with Ru (II)-pydim complex interface layer. The Ru (II) …
investigated for the fabricated device with Ru (II)-pydim complex interface layer. The Ru (II) …
Analysis of interface states in Au/ZnO/p-InP (MOS) structure
FZ Acar, A Buyukbas-Ulusan, A Tataroglu - Journal of Materials Science …, 2018 - Springer
Zinc oxide (ZnO) film was deposited on p-type InP substrate by means of radio frequency
magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated …
magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated …
Photosensing properties of ruthenium (II) complex-based photodiode
Abstract Ru (II) complex containing 2, 6-di (1 H-pyrazol-3-yl) pyridine ligand was
synthesized to prepare organic-based photodiode. After forming the back contact with …
synthesized to prepare organic-based photodiode. After forming the back contact with …
Dye sensitized solar cell-based optoelectronic device using novel [Ru (L1)(L2)(NCS) 2] complex
A dye sensitized solar cell-based photodiode was prepared using novel [Ru (L1)(L2)(NCS)
2] complex for solar energy and optoelectronic applications. The new heteroleptic ruthenium …
2] complex for solar energy and optoelectronic applications. The new heteroleptic ruthenium …
Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer
Difluoro-4-bora-3a, 4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used
as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical …
as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical …
Fabrication of a new hybrid coronene/n-Si structure by using spin coating technique and its photoresponse and admittance spectroscopy studies
Abstract Coronene/n-Si Schottky structure has been fabricated by Coronene thin film
deposited on n-Si substrate using the spin coating technique. The current-voltage (IV) …
deposited on n-Si substrate using the spin coating technique. The current-voltage (IV) …
Boron doped graphene based linear dynamic range photodiode
The boron-doped graphene oxide film was prepared using drop casting/coating technique.
The film was coated by hydrothermal method on p-Si substrate and thus Al/p-Si/B-doped …
The film was coated by hydrothermal method on p-Si substrate and thus Al/p-Si/B-doped …
Analysis of illumination dependent electrical characteristics of α-styryl substituted BODIPY dye-based hybrid heterojunction
The α-styryl substituted BODIPY compound (BDP-Sty) was synthesized and characterized.
The optimize ground state structure, HOMO and LUMO simulations, MEP surface map, and …
The optimize ground state structure, HOMO and LUMO simulations, MEP surface map, and …
Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3–Tl2Se/p-Si devices
A Tataroğlu, C Ahmedova, G Barim… - Journal of Materials …, 2018 - Springer
In this study, coumarin-doped Pr 2 Se 3–Tl 2 Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were
covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin …
covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin …