After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

A simple analytical method is suggested to calculate the mobility of majority carriers in
semiconductors. The method allows one to adequately describe experimental data in a wide …

High-voltage 4 H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors,
and thyristors are discussed. The results of experimental and theoretical studies of the …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …

Предложен простой аналитический способ вычисления подвижности основных
носителей заряда, позволяющий хорошо описать экспериментальные данные в …

The homogeneity of the turn-on process in high-voltage 4H–SiC thyristors has been
investigated for the first time. It is shown that, even at the holding current, which is the …

It has been shown that the classical theory of critical charge, Qcr, developed earlier for
silicon (Si) thyristors cannot be applied adequately to silicon carbide (SiC) thyristor …

The specific features of the temperature and bias dependences of the switch-on gate current
in SiC thyristors are examined analytically for two possible switching mechanisms. The so …