[PDF][PDF] Extended monolithic integration levels for highly functional GaN power ics

M Basler - 2023 - publica-rest.fraunhofer.de
A new generation of power electronic systems with reduced size, losses and costs is
emerging due to the rapid development of gallium nitride (GaN) transistors. These …

A circuit simulation flow for substrate minority carrier injection in smart power ICs

M Kollmitzer, M Olbrich, E Barke - 2017 29th International …, 2017 - ieeexplore.ieee.org
This paper proposes a point-to-point modeling scheme for Spice-based circuit simulation of
parasitic coupling effects caused by minority carrier injection into the substrate of a deep …

[HTML][HTML] 基於高壓製程的高速位準轉換器設計

CH Lo - 2017 - ir.lib.ncu.edu.tw
摘要(中) 本論文基於栓鎖式電壓位準轉換電路提出兩種新型適用於高電壓位準轉換器電路架構,
並使用高壓製程中的功率電晶體作為電壓隔離器件設計電路. 由於功率元件當作高壓隔離開關 …