Structural, dielectric, electrical and optical properties of Li/Fe modified barium tungstate double perovskite for electronic devices

S Mishra, RNP Choudhary, SK Parida - Ceramics International, 2022 - Elsevier
In this communication, the synthesis (solid-state reaction route) and characterization
(structural and electrical properties) of Li/Fe modified barium tungstate BaWO 4 of chemical …

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO 3 and LaCr 0.90 Ir 0.10 O 3 perovskites

M Coşkun, Ö Polat, FM Coşkun, Z Durmuş, M Çağlar… - RSC …, 2018 - pubs.rsc.org
We have prepared LaCrO3 (LCO) and 10% Ir doped LCO samples by the solid state
reaction method and studied the electrical modulus and the other dielectric properties of the …

Study of synthesis and characterization of triple ions modified bismuth ferrite for electronic devices:(Bi1/2Li1/2)(Fe1/3Mn1/3W1/3) O3

SS Hota, D Panda, RNP Choudhary - Solid State Ionics, 2023 - Elsevier
A high-temperature solid-state reaction technique was used to create a lead-free complex
perovskite compound of a chemical composition (Bi 1/2 Li 1/2)(Fe 1/3 Mn 1/3 W 1/3) O 3 …

Structural, topological, dielectric, and electrical properties of a novel calcium bismuth tungstate ceramic for some device applications

SS Hota, D Panda, RNP Choudhary - Journal of Materials Science …, 2023 - Springer
This article describes the characterization (structural, topological, dielectric, and electrical
properties) of a lead-free complex perovskite Ca3Bi2WO9 (CBWO) prepared by a solid-state …

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

A Turut, A Karabulut, K Ejderha, N Bıyıklı - Materials Science in …, 2015 - Elsevier
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al 2 O 3/n-
GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer …

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

A Turut, DE Yıldız, A Karabulut, İ Orak - Journal of Materials Science …, 2020 - Springer
Abstract Au/Ti/HfO 2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were
fabricated by atomic layer deposition technique and their electrical properties were …

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

K Ejderha, A Turut - Journal of Electronic Materials, 2021 - Springer
Abstract Ni/n-GaP/Al Schottky diodes have been fabricated and thermally annealed at 400°
C to obtain Schottky rectifying contacts with optimum performance and improve …

Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer

A Turut, A Karabulut, K Ejderha… - Materials Research …, 2015 - iopscience.iop.org
High-k Al 2 O 3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has
been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed …

Effect of sintering temperature on dielectric and electrical properties of bio-waste derived beta-dicalcium silicate

SNHM Yunus, KS Fhan, B Johar, NMS Adzali… - Materials Chemistry and …, 2023 - Elsevier
Beta-dicalcium silicate ceramics were synthesized by mechanochemical-assisted solid-state
reaction route using rice husks and chicken eggshells as silica and calcium oxide sources …

Optical, electrical properties and characterization of (C2H5NH3) 2CdCl4 compound

R Lefi, FB Nasr, H Hrichi, H Guermazi - Optik, 2016 - Elsevier
Synthesis and characterization of a hybrid perovskite crystal (C 2 H 5 NH 3) 2 CdCl 4
(EACC) were reported. X-ray diffraction indicates that this compound crystallizes at room …