Light-triggered, enhancement-mode AlInN/GaN HEMTs with sub-microsecond switching times
Light-triggered, AlInN/GaN high-electron-mobility transistors (HEMTs) are presented.
Selective thermal oxidation of the AlInN barrier between the source and drain depletes the …
Selective thermal oxidation of the AlInN barrier between the source and drain depletes the …
[HTML][HTML] Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …
fractions are presented. The SLs are grown using metal–organic chemical vapor deposition …