AQ Liu, XM Zhang - Journal of Micromechanics and …, 2006 - iopscience.iop.org
The paper reviews the state-of-the-art of miniaturized tunable lasers constructed by microelectromechanical systems (MEMS) technology, covering various topics of laser …
D Bimberg - Electronics Letters, 2008 - search.proquest.com
Invention of non-disruptive fabrication technologies for semiconductor quantum dots presented a dream for generations of semiconductor device engineers. Today, such …
We show that the dynamic response of electrically pumped semiconductor quantum dot lasers can be quantitatively understood by including the strongly nonlinear character of …
The monolithic growth of III–V semiconductor lasers on Si remains the'holy grail'for full-scale deployment of Si photonics with reduced cost and added flexibility. Semiconductor lasers …
We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A …
We show that the long-established concept of a linewidth-enhancement factor α to describe carrier-induced refractive index changes in semiconductor lasers breaks down in quantum …
S Kreinberg, X Porte, D Schicke, B Lingnau… - Nature …, 2019 - nature.com
Synchronization of coupled oscillators at the transition between classical physics and quantum physics has become an emerging research topic at the crossroads of nonlinear …
The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate …
S Yılmaz, M Şahin - physica status solidi (b), 2010 - Wiley Online Library
In this study, the linear and third‐order nonlinear optical absorption coefficients of intersublevel transitions have been calculated for a spherical CdS/SiO2 quantum dot (QD) …