Electromigration in submicron interconnect features of integrated circuits
H Ceric, S Selberherr - Materials Science and Engineering: R: Reports, 2011 - Elsevier
Electromigration (EM) is a complex multiphysics problem including electrical, thermal, and
mechanical aspects. Since the first work on EM was published in 1907, extensive studies on …
mechanical aspects. Since the first work on EM was published in 1907, extensive studies on …
Effect of Joule heating and current crowding on electromigration in mobile technology
In the present era of big data and internet of things, the use of microelectronic products in all
aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones …
aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones …
Physically based models of electromigration: From Black's equation to modern TCAD models
Electromigration failure is a major reliability concern for integrated circuits. The continuous
shrinking of metal line dimensions together with the interconnect structure arranged in many …
shrinking of metal line dimensions together with the interconnect structure arranged in many …
Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction
Plastic deformation was observed in damascene Cu interconnect test structures during an in
situ electromigration experiment and before the onset of visible microstructural damage …
situ electromigration experiment and before the onset of visible microstructural damage …
A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production
KN Tu, AM Gusak - Journal of Applied Physics, 2019 - pubs.aip.org
We have revisited Black's equation of mean-time-to-failure (MTTF) for electromigration from
the viewpoint that in irreversible processes, entropy production is the controlling behavior …
the viewpoint that in irreversible processes, entropy production is the controlling behavior …
Synergistic effect of electromigration and Joule heating on system level weak-link failure in 2.5 D integrated circuits
In system level electromigration test of 2.5 D integrated circuits, a failure mode due to
synergistic effect of Joule heating and electromigration has been found. In the test circuit …
synergistic effect of Joule heating and electromigration has been found. In the test circuit …
Electromigration Reliability of Advanced High-Density Fan-Out Packaging With Fine-Pitch 2-/2-μm L/S Cu Redistribution Lines
CL Liang, YS Lin, CL Kao, D Tarng… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
The novel fan-out (FO) packaging incorporating fine-pitch small linewidth Cu redistribution
line (RDL) technology was designed for achieving high-density packaging. However, the …
line (RDL) technology was designed for achieving high-density packaging. However, the …
Contact stiffness of finite size subsurface defects for atomic force microscopy: Three-dimensional finite element modeling and experimental verification
Z Parlak, F Levent Degertekin - Journal of Applied Physics, 2008 - pubs.aip.org
We describe a three-dimensional (3D) finite element analysis model of the contact between
an atomic force microscopy (AFM) tip and a substrate with finite size subsurface structures …
an atomic force microscopy (AFM) tip and a substrate with finite size subsurface structures …
Copper metal for semiconductor interconnects
YL Cheng, CY Lee, YL Huang - Noble and Precious Metals …, 2018 - books.google.com
Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the
integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace …
integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace …
Physics-based simulation of stress-induced and electromigration-induced voiding and their interactions in on-chip interconnects
A Kteyan, V Sukharev - Microelectronic Engineering, 2021 - Elsevier
A novel physics-based simulation model of electromigration (EM) and stress-migration (SM)
induced degradation of electrical characteristics of on-chip interconnects is developed …
induced degradation of electrical characteristics of on-chip interconnects is developed …