Atomically precise donor-based quantum devices are a promising candidate for solid-state
quantum computing and analog quantum simulations. However, critical challenges in …

We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …

The controlled confinement of the metallic delta-layer to a single atomic plane has so far
remained an unsolved problem. In the present study, the delta-type structure with atomic …

Low resistivity, near-surface doping in silicon represents a formidable challenge for both the
microelectronics industry and future quantum electronic devices. Here we employ an ultra …

Thin, high-density layers of dopants in semiconductors, known as δ-layer systems, have
recently attracted attention as a platform for exploration of the future quantum and classical …

The atomically precise placement of dopants in semiconductors using scanning tunneling
microscopes has been used to create planar dopant-based devices, enabling the …

We demonstrate the successful down-scaling of donor-based silicon quantum dot structures
to the single donor limit. These planar devices are realized in ultra high vacuum (UHV) by …

We address the impact of Si growth rate on electron transport in Si: P δ-doped devices
encapsulated by low temperature Si molecular beam epitaxy. Si growth rates ranging from …

We investigate the ability to introduce strain into atomic-scale silicon device fabrication by
performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon …

We report a novel nanoscale device concept based on a highly doped $\delta $-layer tunnel
junction embedded in a semiconductor for charge sensing. Recent advances in Atomic …