[HTML][HTML] Modeling electronic and optical properties of III–V quantum dots—selected recent developments

A Mittelstädt, A Schliwa, P Klenovský - Light: Science & Applications, 2022 - nature.com
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …

Understanding quantum confinement of charge carriers in layered 2D hybrid perovskites

J Even, L Pedesseau, C Katan - ChemPhysChem, 2014 - Wiley Online Library
Layered hybrid organic perovskites (HOPs) structures are a class of low‐cost two‐
dimensional materials that exhibit outstanding optical properties, related to dielectric and …

Universal description of III-V/Si epitaxial growth processes

I Lucci, S Charbonnier, L Pedesseau, M Vallet… - Physical review …, 2018 - APS
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically
resolved microscopy shows that monodomain three-dimensional islands are observed at the …

Symmetry-based tight binding modeling of halide perovskite semiconductors

S Boyer-Richard, C Katan, B Traore… - The journal of …, 2016 - ACS Publications
On the basis of a general symmetry analysis, this paper presents an empirical tight-binding
(TB) model for the reference Pm-3 m perovskite cubic phase of halide perovskites of general …

Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

C Cornet, S Charbonnier, I Lucci, L Chen… - Physical Review …, 2020 - APS
Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We
show that the miscut impacts the initial antiphase domain distribution, with two distinct …

[HTML][HTML] Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

RSR Gajjela, AL Hendriks, JO Douglas… - Light: Science & …, 2021 - nature.com
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …

Electronic states of (InGa)(AsSb)/GaAs/gap quantum dots

P Klenovský, A Schliwa, D Bimberg - Physical Review B, 2019 - APS
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum
dots are presented. This system is unique since it exhibits concurrently direct and indirect …

[图书][B] Integrated lasers on silicon

C Cornet, Y Léger, C Robert - 2016 - books.google.com
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

A Stress‐Free and Textured GaP Template on Silicon for Solar Water Splitting

I Lucci, S Charbonnier, M Vallet… - Advanced Functional …, 2018 - Wiley Online Library
This work shows that a large‐scale textured GaP template monolithically integrated on Si
can be developed by using surface energy engineering, for water‐splitting applications. The …

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001)

P Steindl, EM Sala, B Alén, D Bimberg… - New Journal of …, 2021 - iopscience.iop.org
Understanding the carrier dynamics of nanostructures is the key for development and
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …