An efficient technique to simulate the AC/DC parameters of Trigate FinFETs

Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

S Panda, RS Parida, GC Dora, R Swain… - … on Electrical and …, 2024 - Springer
Temperature, doping concentration, and gate work function all have a significant impact on
performance of transistor during miniaturization. The design and in-depth investigation of a …
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