A fully integrated 24-GHz eight-element phased-array receiver in silicon
X Guan, H Hashemi, A Hajimiri - IEEE Journal of Solid-State …, 2004 - ieeexplore.ieee.org
This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a
SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal …
SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal …
A 24-GHz SiGe phased-array receiver-LO phase-shifting approach
H Hashemi, X Guan, A Komijani… - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-
GHz phased-array receiver using SiGe technology. Sixteen phases of the local oscillator are …
GHz phased-array receiver using SiGe technology. Sixteen phases of the local oscillator are …
On the potential of SiGe HBTs for extreme environment electronics
JD Cressler - Proceedings of the IEEE, 2005 - ieeexplore.ieee.org
" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …
operation of electronic components in surroundings lying outside the domain of …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
Integrated phased array systems in silicon
Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …
Self-aligned SiGe NPN transistors with 285 GHz fmax and 207 GHz fT in a manufacturable technology
B Jagannathan, M Khater, F Pagette… - IEEE Electron …, 2002 - ieeexplore.ieee.org
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and
an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from …
an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from …
A fully integrated 24-GHz phased-array transmitter in CMOS
A Natarajan, A Komijani… - IEEE Journal of solid-state …, 2005 - ieeexplore.ieee.org
This paper presents the first fully integrated 24-GHz phased-array transmitter designed
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …
Integrated transversal equalizers in high-speed fiber-optic systems
H Wu, JA Tierno, P Pepeljugoski… - IEEE Journal of Solid …, 2003 - ieeexplore.ieee.org
Intersymbol interference (ISI) caused by intermodal dispersion in multimode fibers is the
major limiting factor in the achievable data rate or transmission distance in high-speed …
major limiting factor in the achievable data rate or transmission distance in high-speed …
On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction
TSD Cheung, JR Long, K Vaed… - … Solid-State Circuits …, 2003 - ieeexplore.ieee.org
Transmission lines are implemented using an all-copper backend developed for RF and
microwave applications. Wavelength reduction is used to achieve a Q factor> 20 from …
microwave applications. Wavelength reduction is used to achieve a Q factor> 20 from …
A 0.8 THz SiGe HBT Operating at 4.3 K
PS Chakraborty, AS Cardoso, BR Wier… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction
bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f MAX …
bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f MAX …