We investigate the blocking layer formation of the trimethoxypropylsilane small molecule
inhibitor (SMI), its blocking mechanisms, and all relevant blocking layer disintegration …

Small-molecule inhibitors are promising for achieving area-selective atomic layer deposition
(ALD) due to their excellent compatibility with industrial processes. In this work, we report on …

Area-selective depositions (ASD) take advantage of the chemical contrast between material
surfaces in device fabrication, where a film can be selectively grown by chemical vapor …

Area-selective atomic layer deposition (AS-ALD) is a coveted method for the fabrication of
next-generation nano-electronic devices, as it can complement lithography and improve …

Area-selective atomic layer deposition (ALD) of dielectrics on chemically similar growth and
nongrowth surfaces is very challenging. In this study, we use aminosilane inhibitors to …

Area‐selective deposition (ASD) shows great promise for sub‐10 nm manufacturing in
nanoelectronics, but significant challenges remain in scaling to ultrasmall dimensions and …

As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely
used for the preparation of various materials in the fields of microelectronics, energy and …

Selective thermal pre-functionalization of plasma-deposited SiN x surface with
benzaldehyde has been shown to facilitate the formation of a carbon-rich hydrofluorocarbon …

During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation
eventually occurs as the metal precursor reacts with the surface through secondary …

As an important inorganic material, zirconium dioxide (ZrO2) has a wide range of
applications in the fields of microelectronics, coating, catalysis and energy. Due to its high …