Low-symmetric GeTe semiconductors have attracted wide-ranging attention due to their
excellent optical and thermal properties, but only a few research studies are available on …

GeTe is an important narrow bandgap semiconductor material and has found application in
the fields of phase change storage as well as spintronics devices. However, it has not been …

Benefiting from the attractive high carrier mobility, large absorption coefficient, and ambient
stability, group IV–VI compounds show excellent potential applications for optoelectronic …

GeTe is an important narrow band gap semiconductor material, which has found application
in the fields of thermoelectricity, phase change storage as well as switch. However, it has not …

In the present paper, an inherent instability in the ternary chalcogenide compound AgSbTe 2
is described from the electronic structure viewpoint. Our calculations, which are based on …

We focus on the defect and phase stabilities in the pseudo binary alloy (GeTe) x (AgSbTe 2)
1− x (TAGS; tellurium antimony germanium silver). TAGS is expected to be a high effective …

The optical contrast in a phase change material is concomitant with its structural transition.
These two are connected by first recognizing that Friedel oscillations couple electrons …

(1. 北京理工大学物理学院, 北京100081; 2. 昆明物理研究所, 云南昆明650223; 3.
云南省先进光电材料与器件重点实验室, 云南昆明650223; 4. 昆明冶金高等专科学校建筑工程 …