Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …

Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …

Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …

Wurtzite AlN is an ultrawide bandgap semiconductor that has been developed for
applications including power electronics and optoelectronics. Thermal management of these …

Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …

Using hybrid functional calculations, we investigate the formation of DX centers in GaN and
AlN. We find that O, Si, and Ge are shallow donors in GaN, but form stable DX centers in AlN …

Acceptor defects and impurities play a critical role in the performance of GaN‐based
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …