[HTML][HTML] 3D ink-printed, sintered porous silicon scaffolds for battery applications

S Moser, C Kenel, LA Wehner, R Spolenak… - Journal of Power …, 2021 - Elsevier
The fabrication of 3D ink-printed and sintered porous Si scaffolds as electrode material for
lithium-ion batteries is explored. A hierarchically-porous architecture consisting of channels …

Estimation of surface roughness of direct metal laser sintered AlSi10Mg using artificial neural networks and response surface methodology

UMR Paturi, DG Vanga, RB Duggem… - Materials and …, 2023 - Taylor & Francis
Direct metal laser sintering (DMLS) is a metal-specific additive manufacturing (AM)
technique that has grown in efficiency and precision due to compelling advancements in …

Impact of oxygen content in powders on the morphology of the laser molten tracks in preparation for additive manufacturing of silicon

M Le Dantec, L Güniat, M Leistner, R Figi, D Bleiner… - Powder Technology, 2020 - Elsevier
Powder additive pulsed Nd: YAG laser (wavelength 1064 nm), with the aim of preparing AM
of such material. The influence of oxygen content in the initial silicon powders on the …

Epitaxial growth of silicon on silicon wafers by direct laser melting

M Le Dantec, M Abdulstaar, M Leparoux, P Hoffmann - Materials, 2020 - mdpi.com
Additive manufacturing (AM) of brittle materials remains challenging, as they are prone to
cracking due to the steep thermal gradients present during melting and cooling after laser …

[引用][C] The initial composition as an additional parameter determining the melting behaviour of nanoparticles (a case study on Six-Ge1-x alloys)

АВ Шишулин, АА Потапов… - Eurasian Physical …, 2021 - phtj.buketov.edu.kz
Being the basis of modern electronics, silicon-germanium semiconductor alloys are widely
used in a great number of fields. In this paper, the phase equilibria in Si-Ge nanoparticles …

Additive Fabrication of Silicon Pillars on Monocrystalline Silicon by Direct Laser Melting

MCL Le Dantec - 2018 - infoscience.epfl.ch
Additive Manufacturing (AM) is an emerging part production technology that offers many ad-
vantages such as high degree of customization, material savings and design of 3D highly …

НЕКОТОРЫЕ ОСОБЕННОСТИ ВЫСОКОТЕМПЕРАТУРНЫХ ФАЗОВЫХ РАВНОВЕСИЙ В НАНОЧАСТИЦАХ СИСТЕМЫ SiX - Ge1-X

АВ Шишулин, АВ Шишулина - Физико-химические аспекты изучения …, 2019 - elibrary.ru
В рамках термодинамического подхода смоделированы фазовые равновесия в
наночастицах различного состава системы Si x-Ge 1-x в двухфазной области между …

[HTML][HTML] THE INITIAL COMPOSITION AS AN ADDITIONAL PARAMETER DETERMINING THE MELTING BEHAVIOUR OF NANOPARTICLES (A CASE STUDY ON Si

AV Shishulin, AA Potapov, AV Shishulina - azdok.org
Being the basis of modern electronics, silicon-germanium semiconductor alloys are widely
used in a great number of fields. In this paper, the phase equilibria in Si-Ge nanoparticles …

Method for printing wide bandgap semiconductor materials

JC Gagnon, MJ Presley, SM Storck… - US Patent …, 2023 - Google Patents
A method for printing a semiconductor material includes depositing a molten metal onto a
substrate in an enclosed chamber to form a trace having a maximum height of 15 …

Method for printing wide bandgap semiconductor materials

JC Gagnon - US Patent 11,056,338, 2021 - Google Patents
A method for printing a semiconductor material includes depositing a molten metal onto a
substrate in an enclosed chamber to form a trace having a maximum height of 15 …