Semiconductor–metal transition in Bi2Se3 caused by impurity doping
T Uchiyama, H Goto, E Uesugi, A Takai, L Zhi… - Scientific reports, 2023 - nature.com
Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor–
metal (SM) transition at 35 K. To deepen the understanding of this phenomenon, structural …
metal (SM) transition at 35 K. To deepen the understanding of this phenomenon, structural …
Pressure-induced electronic anomaly and multiband superconductivity in the doped topological insulator
M Li, K Xu, M Xu, Y Fang, Z Yan, N Li, Z Yu, J Zhang… - Physical Review B, 2019 - APS
The tunability of the electronic topological transition is fundamentally important to unveil new
quantum matters. Here, we report the observation of pressure-induced electronic anomaly …
quantum matters. Here, we report the observation of pressure-induced electronic anomaly …
Quantum anomalous Hall effect for metrology
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great
potential to revolutionize quantum electrical metrology by establishing primary resistance …
potential to revolutionize quantum electrical metrology by establishing primary resistance …
Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films
D Han, Z Wang, XPA Gao, Z Zhang - Crystal Growth & Design, 2020 - ACS Publications
The contribution of topological insulator surface states to their transport properties can be
tuned by doping, but the uniformity effect of the dopants has been ignored in previous …
tuned by doping, but the uniformity effect of the dopants has been ignored in previous …