[HTML][HTML] Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs
Featured Application Radio-Frequency Technologies for 5G and 6G Wireless
Communications. Abstract Millimeter-wave (mm-Wave) phased array systems need to meet …
Communications. Abstract Millimeter-wave (mm-Wave) phased array systems need to meet …
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion
Heterogenous and monolithic 3-D (M3D) integration of III–V RF devices on Si CMOS is a
very attractive technology for future wireless communication systems. However, the self …
very attractive technology for future wireless communication systems. However, the self …
[HTML][HTML] Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power …
For operation as power amplifiers in RF applications, high electron mobility transistor
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …
Performance Assessment of Irregular Array Configurations for Beyond 100-GHz Multi-User MIMO Systems
A comparison of thinned and clustered array configurations is presented where the former is
generated by deactivating the radiating elements permanently while the latter is generated …
generated by deactivating the radiating elements permanently while the latter is generated …
DC Reliability Study of GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers
BJ O'Sullivan, A Alian… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
We report on charge capture and emission in Metal-Oxide-Semiconductor AlGaN/AlN/GaN
High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave …
High-Electron Mobility Transistors (MOS-HEMT) foreseen as power amplifiers in mm-wave …
RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz
A Oliveira, O Valorge, C Dubarry… - 2023 53rd European …, 2023 - ieeexplore.ieee.org
In this paper, passive devices integrated in the top-tier level of a 3D homogeneous
integration are characterized up to 220 GHz. A three steps de-embedding process is …
integration are characterized up to 220 GHz. A three steps de-embedding process is …
Comparison of Two SOLR Calibration Approaches for Oscilloscope-Based S-Parameter Measurements
D Smellie, R ElKashlan, A Khaled… - 2024 54th European …, 2024 - ieeexplore.ieee.org
This work studies two calibration methods for S-parameter measurements by a real-time
oscilloscope (RTO). Vector Network Analyser (VNA) measurements of an active and passive …
oscilloscope (RTO). Vector Network Analyser (VNA) measurements of an active and passive …
[HTML][HTML] Конструктивные подходы к интеграции приборов на основе разных полупроводниковых технологий в микроэлектронике СВЧ
АС Ефимов - Известия высших учебных заведений России …, 2023 - cyberleninka.ru
Введение. Достижение высоких характеристик радиоэлектронной системы требует
применения комбинации приборов, реализованных на разных полупроводниковых …
применения комбинации приборов, реализованных на разных полупроводниковых …
[PDF][PDF] Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
H Hahn, C Mauder, M Marx, Z Gao… - CS Mantech 2024 …, 2024 - dial.uclouvain.be
1AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany; 2imec, Kapeldreef 75, 3001
Leuven, Belgium; 3Université catholique de Louvain (UCLouvain), Place du Levant; 3 …
Leuven, Belgium; 3Université catholique de Louvain (UCLouvain), Place du Levant; 3 …
[PDF][PDF] Approaches to Heterogeneous Integration for Millimeter-Wave Applications
AS Efimov - Journal of the Russian Universities, 1998 - re.eltech.ru
Introduction. Enhanced performance of electronic systems can be achieved by
heterogeneous integration of different semiconductor technologies. The benefits of …
heterogeneous integration of different semiconductor technologies. The benefits of …