Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
This study compares the performance of radio frequency (RF) mixers employing
independent-gate tunnel field-effect transistors (IG TFETs) based on homo (InAs) and …
independent-gate tunnel field-effect transistors (IG TFETs) based on homo (InAs) and …
A novel low voltage low power high linearity self-biasing current-reuse up-conversion mixer
L Zhao, C Wang - Wireless Personal Communications, 2015 - Springer
In this paper, a new complementary metal oxide semiconductor (CMOS) low-voltage low-
power current-reuse up-conversion mixer using Chartered 0.18\,\upmu m 0.18 μ m CMOS …
power current-reuse up-conversion mixer using Chartered 0.18\,\upmu m 0.18 μ m CMOS …
[PDF][PDF] Modeling of InAlAs/InGaAs/InAlAs DG-HEMT mixer for microwave application
P Parveen, N Verma, M Bhattacharya… - IOSR Journal of …, 2015 - academia.edu
This paper explores the potential of ultra-high frequency low noise InAlAs/InGaAs/InAlAs
double gate high electron mobility transistor (DG-HEMT) for mixer applications. A …
double gate high electron mobility transistor (DG-HEMT) for mixer applications. A …
Model of cylindrical surrounding double-gate (CSDG) MOSFET based mixer
OE Oyedeji, VM Srivastava - 2019 10th International …, 2019 - ieeexplore.ieee.org
The Metal Oxide Semiconductor Field-Effect Transistors (MOSFET) are vital elements in
designing and fabricating high-speed switching devices applicable in microelectronics …
designing and fabricating high-speed switching devices applicable in microelectronics …
[图书][B] Analysis & design of radio frequency wireless communication integrated circuits with nanoscale double gate MOSFETs
S Laha - 2015 - search.proquest.com
Today's nanochips contain billions of transistors on a single die that integrates whole
electronic systems as opposed to sub-system parts. Together with ever higher frequency …
electronic systems as opposed to sub-system parts. Together with ever higher frequency …
A novel separate gate InAlAs/InGaAs/InAlAs DG-HEMT heterogeneous mixer
N Verma, M Bhattacharya, J Jogi - TENCON 2015-2015 IEEE …, 2015 - ieeexplore.ieee.org
This paper presents an analytical model of a heterogeneous mixer using a
InAlAs/InGaAs/InAlAs separate gate double heterostructure double gate HEMT (DG-HEMT) …
InAlAs/InGaAs/InAlAs separate gate double heterostructure double gate HEMT (DG-HEMT) …