The electronic properties of epitaxial graphene grown on SiC have shown its potential as a
viable candidate for post-CMOS electronics. However, progress in this field requires a …

This article reviews the materials science of graphene grown epitaxially on the hexagonal
basal planes of SiC crystals and progress toward the deterministic manufacture of graphene …

We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Graphene, a single monolayer of graphite, has recently attracted considerable interest
owing to its novel magneto-transport properties,,, high carrier mobility and ballistic transport …

Thermally induced growth of graphene on the two polar surfaces of 6 H-Si C is investigated
with emphasis on the initial stages of growth and interface structure. The experimental …

We show experimentally that multilayer graphene grown on the carbon terminated SiC (000
1¯) surface contains rotational stacking faults related to the epitaxial condition at the …

Graphene, a two-dimensional sheet of carbon atoms, is a promising material for next-
generation technology because of its advantageous electronic properties, such as extremely …

Employing density-functional calculations we study single and double graphene layers on Si-
and<? format?> C-terminated 1× 1—6 H-SiC surfaces. We show that, in contrast with earlier …

This paper describes the behavior of top-gated transistors fabricated using carbon,
specifically epitaxial graphene on SiC, as the active material. Although graphene devices …

Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising
route for future development of graphene based electronics. In the present work, we have …