Electric field and strain tunable band gap and band alignments of MoSi 2 N 4/MSe (M= In, Ga) van der Waals heterostructures
Using van der Waals heterostructures (VDWHs) to engineer novel electronic properties of
two-dimensional (2D) material systems has proven to be a viable strategy in recent years …
two-dimensional (2D) material systems has proven to be a viable strategy in recent years …
Tunable abundant valley Hall effect and chiral spin–valley locking in Janus monolayer VCGeN 4
K Jia, XJ Dong, SS Li, WX Ji, CW Zhang - Nanoscale, 2024 - pubs.rsc.org
It is both conceptually and practically fascinating to explore fundamental research studies
and practical applications of two-dimensional systems with the tunable abundant valley Hall …
and practical applications of two-dimensional systems with the tunable abundant valley Hall …
[HTML][HTML] Intrinsic spin Hall and Rashba effects in metal nitride bromide monolayer for spin-orbitronics
P Nandi, S Sharma, A De Sarkar - Journal of Applied Physics, 2024 - pubs.aip.org
Investigating the interplay between charge and spin conversion in two-dimensional (2D)
materials holds significant promise for futuristic electronic applications. Through density …
materials holds significant promise for futuristic electronic applications. Through density …
[HTML][HTML] Mapping Rashba-spin-valley coalescence in two-dimensional monolayers via high-throughput first-principles calculations
A Arora, S Sharma, A De Sarkar - Journal of Applied Physics, 2024 - pubs.aip.org
This study delves into the interplay of symmetry and structure in 2D systems to identify
monolayers hosting valley physics together with the Rashba effect. Through high-throughput …
monolayers hosting valley physics together with the Rashba effect. Through high-throughput …
A two-dimensional TaGe2P4–WSi2As4 van der Waals heterojunction: A near-ideal rectifier
WK Zhang, YH Liu, H He, GP Zhang, ZL Li… - Chinese Journal of …, 2024 - Elsevier
Searching for suitable 2D metal-semiconductor interfaces to design high-performance
Schottky diodes is essential for the continuous miniaturization of devices. Herein, by using …
Schottky diodes is essential for the continuous miniaturization of devices. Herein, by using …
First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic …
Y Ding, Y Wang - Frontiers of Physics, 2024 - Springer
As the homologous compounds of MoSi2N4, the MoSi2N4 (MoN) n monolayers have been
synthesized in a recent experiment. These systems consist of homogeneous metal nitride …
synthesized in a recent experiment. These systems consist of homogeneous metal nitride …
Zero-Dipole Schottky Contact: Homologous Metal Contact to 2D Semiconductor
CC Tho, YS Ang - arXiv preprint arXiv:2411.02996, 2024 - arxiv.org
Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-
Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and …
Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and …
[PDF][PDF] Applied Interfaces
Using van der Waals heterostructures (VDWHs) to engineer novel electronic properties of
two-dimensional (2D) material systems has proven to be a viable strategy in recent years …
two-dimensional (2D) material systems has proven to be a viable strategy in recent years …